Chemical Non-equilibrium Simulation of Anode Attachment of an Argon Transferred Arc

Plasma Chemistry and Plasma Processing - The diffuse and constricted arc attachment modes to the anode of an argon wall-stabilized transferred arc are investigated using a 2D chemical...     

Cuprous oxide/titanium dioxide composite photocatalytic decolorization of reactive brilliant red X-3B dyes wastewater under visible light

Research on Chemical Intermediates - In recent years, how to improve photocatalytic performance under visible light has become one of the research hot topics. The nano-TiO2 particles were...     

Redox-Active Two-Dimensional Covalent Organic Frameworks (COFs) for Selective Reductive Separation of Valence-Variable,Redox-Sensitive and Long-Lived Radionuclides

We report the first example of 2D covalent organic framework nanosheets (Redox-COF1) for the selective reduction and in situ loading of valence-variable, redox-sensitive and long-lived radionuclides (abbreviated as VRL nuclides). Compared with sorbents based on chemical adsorption and physical adsorption, the redox adsorption mechanism of Redox-COF1 can effectively reduce the impact of functional group protonation under the usual high-acidity conditions in chemisorption, and raise the adsorption efficiency from the monotonous capture by pores in physisorption. The adsorption selectivity for UO₂²⁺ reaches up to unprecedented ca. 97 % at pH 3, more than for any analogous adsorbing material.     

排名聚合算法在少量长列表聚合中的性能比较分析

排名聚合将多个排名列表聚合成一个综合排名列表,可应用于推荐系统、链路预测、元搜索、提案评选等.当前已有工作从不同角度对不同排名聚合算法进行了综述、比较,但存在算法种类较少、数据统计特性不清晰、评价指标不够合理等局限性.不同排名聚合算法在提出时均声称优于已有算法,但是用于比较的方法不同,测试的数据不同,应用的场景不同,因此何种算法最能适应某一任务在很多情况下仍不甚清楚.本文基于Mallows模型,提出一套生成统计特性可控的不同类型的排名列表的算法,使用一个可应用于不同类型排名列表的通用评价指标,介绍9种排名聚合算法以及它们在聚合少量长列表时的表现.结果发现启发式方法虽然简单,但是在排名列表相似度较高、列表相对简单的情况下,能够接近甚至超过一些优化类方法的结果;列表中平局数量的增长会降低聚合排名的一致性并增加波动;列表数量的增加对聚合效果的影响呈现非单调性.整体而言,基于距离优化的分支定界方法 (FAST)优于其他各类算法,在不同类型的排名列表中表现非常稳定,能够很好地完成少量长列表的排名聚合.     

分数阶Schrodinger—Kirchhoff方程无穷多高能量解的存在性

本文研究如下带有变号势函数的分数阶Schrodinger Kirchhoff方程(a+b∫∫R^N|u(x)-u(y)|^p/|x-y|^N+p^sdxdy)^p-1(-△)p^su+λV(x)|u|^p-2u=f(x,u)-μg(x)|u|^q-2u,x∈R^N.其中s∈(0,1),p∈[2,∞),q∈(l,p),a,b>0,λ,μ>0均为正常数,在V,f,g等函数合适的条件下,运用喷泉定理获得该系统无穷多高能量解的存在性.     

基于Nie-Tan算法的区间二型模糊集质心计算:改变主变量采样个数

计算区间二型模糊集的质心(也称降型)是区间二型模糊逻辑系统中的一个重要模块。Karnik-Mendel(KM)迭代算法通常被认为是计算区间二型模糊集质心的标准算法。尽管如此,KM算法涉及复杂的计算过程,不利于实时应用。在各种改进类算法中,非迭代的Nie-Tan(NT)算法可节省计算消耗。此外,连续版本NT(CNT,continuous version of NT)算法被证明是计算质心的准确算法。本文比较了离散版本NT算法中求和运算和连续版本NT算法中求积分运算,通过四个计算机仿真例子证实了当适度增加区间二型模糊集主变量采样个数时,NT算法的计算结果可以精确地逼近CNT算法。     

EAST装置上W波段多道极向相关反射仪的研制

在EAST装置上安装了X模极化W波段多道相关反射仪，用于测量等离子体芯部密度涨落。该诊断利用低损耗(<3dB)多工器将4个不同频率(79.2GHz，85.2GHz，91.8GHz和96GHz)的微波耦合在一起，通过同一个天线发射。反射波由两个极向分离(~5cm)的天线接收，通过下变频技术实现外差测量。通过对两个极向天线接收的信号进行相关分析，获得芯部湍流垂直速度。对2018年低约束模式(L模)放电进行分析发现，在电子回旋共振加热(ECRH)等离子体中，芯部湍流垂直速度在电子逆磁漂移方向。而在注入同向中性束(co-NBI)后，芯部湍流垂直速度变为离子逆磁漂移方向。     

OCS经由F 31Π里德堡态生成CO(X1Σ+)+S(1D2)产物的波长相关性光解离

本文利用时间切片离子速度成像技术在134∽140 nm波段研究了OCS分子经由F 3¹Π里德堡态的真空紫外光解离动力学. 在选取的5个分别对应OCS(F 3¹Π, v₁=0∽4)的伸缩振动激发的光解波长，实验测得了来自CO(X¹Σ⁺)+S(¹D₂)产物通道的SS(¹D₂))实验影像，并获得了总平动能谱和CO(X¹Σ⁺, v)共生产物的振动布居及角分布. 结果分析表明OCS分子解离生成CO(X¹Σ⁺)+S(¹D₂)产物的过程经历了上态F 3¹Π 与C_?v和C_s构型的下电子态间非绝热耦合过程. 实验结果显示了很强的波长相关性：OCS (F 3¹Π, v₁)的较低转动激发态(v₁=0∽2)和较高转动激发态(v₁=3, 4)的CO(X¹Σ⁺)产物的振动布居和角分布具有显著差异，表明该解离过程中具有不同的解离机理. 本结果提供了振动耦合可能对真空紫外光解离动力学产生关键作用的相关证据.     

A conditional symmetric memristive system with amplitude and frequency control

By introducing a memristor into a chaotic system with a single non-quadratic term and substituting an absolute value function for conditional symmetry, a unique chaotic system is constructed. Firstly, the system shares a special structure of symmetry and conditional symmetry. Secondly, the amplitude and frequency of the system variables can be rescaled by the applied memristor. Interestingly it gives a new case of attractor control namely partial amplitude control and global frequency control. At last, as a new regime of extreme multistability, the memristive system shows relatively simple bifurcation according to the initial condition. This new class of chaotic system has never been reported to the best of our knowledge.

     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.